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Characterisation of tungsten nitride barrier layer for copper metallisation

dc.contributor.authorJin, S.
dc.contributor.authorLi, H.
dc.contributor.authorBender, Hugo
dc.contributor.authorHeyvaert, Ilse
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-06T11:27:14Z
dc.date.available2021-10-06T11:27:14Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3541
dc.sourceIIOimport
dc.titleCharacterisation of tungsten nitride barrier layer for copper metallisation
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHeyvaert, Ilse
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage541
dc.source.endpage544
dc.source.conferenceMicroscopy of Semiconducting Materials
dc.source.conferencedate22/03/1999
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesInstitute of Physics Conference Series; Vol. 164


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