Show simple item record

Investigation of properties of SiO2 defects created during electric stressing at different temperatures

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPangon, Nadège
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-06T11:28:03Z
dc.date.available2021-10-06T11:28:03Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3545
dc.sourceIIOimport
dc.titleInvestigation of properties of SiO2 defects created during electric stressing at different temperatures
dc.typeOral presentation
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists' Conference; December 1999; Charleston, SC, USA.
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record