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Investigation of temperature acceleration of thin oxide time-to-breakdown

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPangon, Nadège
dc.contributor.authorNigam, Tanya
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-06T11:28:27Z
dc.date.available2021-10-06T11:28:27Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3547
dc.sourceIIOimport
dc.titleInvestigation of temperature acceleration of thin oxide time-to-breakdown
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage47
dc.source.endpage50
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume48
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 11th Biennial Conf. on Insulating Films on Semiconductors - INFOS '99. 16-19 June, 1999. Kloster Banz, Germany


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