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Ideal chemistry for reactive ion etching of GaN

dc.contributor.authorKarouta, F.
dc.contributor.authorJacobs, B.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-06T11:28:39Z
dc.date.available2021-10-06T11:28:39Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3548
dc.sourceIIOimport
dc.titleIdeal chemistry for reactive ion etching of GaN
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference1st Workshop on GaN Electronic Devices
dc.source.conferencedate16/08/1999
dc.source.conferencelocationIthaca Greece
imec.availabilityPublished - open access


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