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On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDierickx, Bart
dc.contributor.authorDe Canne, B.
dc.contributor.authorThoma, F.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:47:45Z
dc.date.available2021-09-29T12:47:45Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/354
dc.sourceIIOimport
dc.titleOn the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage353
dc.source.endpage358
dc.source.journalApplied Physics A
dc.source.volume58
imec.availabilityPublished - open access


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