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Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

dc.contributor.authorLoo, Roger
dc.contributor.authorJourdain, Anne
dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLiebens, Maarten
dc.contributor.authorBecker, Lucas
dc.contributor.authorStorck, Peter
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-29T00:10:34Z
dc.date.available2021-10-29T00:10:34Z
dc.date.issued2020-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35502
dc.sourceIIOimport
dc.titleEpitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorJourdain, Anne
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLiebens, Maarten
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewyes
dc.source.beginpage157
dc.source.endpage166
dc.source.conferencePRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu USA
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09804.0157ecst/pdf
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 98, Issue 4


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