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Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

dc.contributor.authorKarouta, F.
dc.contributor.authorJacobs, B.
dc.contributor.authorKramer, M. C. J. C. M.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-06T11:29:13Z
dc.date.available2021-10-06T11:29:13Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3551
dc.sourceIIOimport
dc.titleChemical role of SF6 in a SiCl4-based reactive ion etching of GaN
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceSemiconductor and Integrated Optoelectronics - SIOE
dc.source.conferencedate07/04/1999
dc.source.conferencelocationCardiff UK
imec.availabilityPublished - open access


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