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Dangling bond defects in silicon-passivated strained-Si1xGex channel layers

dc.contributor.authorMadia, Oreste
dc.contributor.authorKepa, Jacek
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-29T00:18:48Z
dc.date.available2021-10-29T00:18:48Z
dc.date.issued2020
dc.identifier.issn0957-4522
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35520
dc.sourceIIOimport
dc.titleDangling bond defects in silicon-passivated strained-Si1xGex channel layers
dc.typeJournal article
dc.contributor.imecauthorMadia, Oreste
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewyes
dc.source.beginpage75
dc.source.endpage79
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.volume31
dc.identifier.urlhttps://doi.org/10.1007/s10854-019-01098-2
imec.availabilityPublished - imec


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