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Mrad(Si) irradiation effects in gate-all-around silicon-on-insulator n-MOSFET's

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMagnusson, Ulf
dc.contributor.authorBorn, Ivan
dc.contributor.authorVlummens, Jan
dc.contributor.authorClaeys, Cor
dc.contributor.authorCoenen, S.
dc.contributor.authorDecreton, M.
dc.date.accessioned2021-09-29T12:47:48Z
dc.date.available2021-09-29T12:47:48Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/355
dc.sourceIIOimport
dc.titleMrad(Si) irradiation effects in gate-all-around silicon-on-insulator n-MOSFET's
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage375
dc.source.endpage380
dc.source.conferenceProceedings of the 6th International Symposium on Silicon-on-Insulator Technology and Devices
dc.source.conferencedate22/05/1994
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 94-11


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