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Characterization of silicon carbon nitride for low temperature wafer-to-wafer direct bonding

dc.contributor.authorNagano, Fuya
dc.contributor.authorIacovo, Serena
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorInoue, Fumihiro
dc.contributor.authorSleeckx, Erik
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-29T01:15:50Z
dc.date.available2021-10-29T01:15:50Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35637
dc.sourceIIOimport
dc.titleCharacterization of silicon carbon nitride for low temperature wafer-to-wafer direct bonding
dc.typeProceedings paper
dc.contributor.imecauthorNagano, Fuya
dc.contributor.imecauthorIacovo, Serena
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewyes
dc.source.conferencePRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu (virtual) US
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09804.0021ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions: Vol. 98, Number 4


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