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EB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessment

dc.contributor.authorOhashi, Takeyoshi
dc.contributor.authorHasumi, Kazuhisa
dc.contributor.authorIkota, Masami
dc.contributor.authorLorusso, Gian
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-29T01:30:49Z
dc.date.available2021-10-29T01:30:49Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35666
dc.sourceIIOimport
dc.titleEB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessment
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage1132525
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XXXIV
dc.source.conferencedate23/02/2020
dc.source.conferencelocationSan José California
dc.identifier.urlhttps://doi.org/10.1117/12.2552193
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 11325


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