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Temperature influence on basic analog parameters of stacked GAA nanosheet nMOSFETs with 4.7nm vertical distance between sheets

dc.contributor.authorPereira de Silva, Vanessa
dc.contributor.authorFernandes Perina, Welder
dc.contributor.authorMartino, Joao A
dc.contributor.authorAgopian, Paula GD
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.date.accessioned2021-10-29T02:03:49Z
dc.date.available2021-10-29T02:03:49Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35727
dc.sourceIIOimport
dc.titleTemperature influence on basic analog parameters of stacked GAA nanosheet nMOSFETs with 4.7nm vertical distance between sheets
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.conferenceEUROSOI/ULIS 2020
dc.source.conferencedate31/03/2020
dc.source.conferencelocationCaen (online) France
imec.availabilityPublished - imec


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