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Intrinsic voltage gain of stacked GAA nanosheet MOSFETs operating at high temperatures

dc.contributor.authorPerina, Welder Fernandes
dc.contributor.authorPereira da Silva, Vanessa
dc.contributor.authorMartino, Joao A.
dc.contributor.authorGhedini Der Agopian, Paula
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.date.accessioned2021-10-29T02:05:25Z
dc.date.available2021-10-29T02:05:25Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35730
dc.sourceIIOimport
dc.titleIntrinsic voltage gain of stacked GAA nanosheet MOSFETs operating at high temperatures
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage65
dc.source.endpage69
dc.source.conference237th ECS Spring Meeting - Advanced CMOS-Compatible Semiconductor Devices 19
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.identifier.urlhttps://doi.org/10.1149/09705.0065ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 97, Issue 5


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