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Articles
Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique
Publication:
Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique
Date
2020
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Prabhakara, Viveksharma
;
Jannis, Daen
;
Béché, Armand
;
Bender, Hugo
;
Verbeeck, Johan
Journal
Semiconductor Science and Technology
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2050
since deposited on 2021-10-29
434
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
2050
since deposited on 2021-10-29
434
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations