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Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique

dc.contributor.authorPrabhakara, Viveksharma
dc.contributor.authorJannis, Daen
dc.contributor.authorBéché, Armand
dc.contributor.authorBender, Hugo
dc.contributor.authorVerbeeck, Johan
dc.date.accessioned2021-10-29T02:23:16Z
dc.date.available2021-10-29T02:23:16Z
dc.date.issued2020
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35761
dc.sourceIIOimport
dc.titleStrain measurement in semiconductor FinFET devices using a novel moiré demodulation technique
dc.typeJournal article
dc.contributor.imecauthorPrabhakara, Viveksharma
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewyes
dc.source.beginpage34002
dc.source.journalSemiconductor Science and Technology
dc.source.issue3
dc.source.volume35
dc.identifier.urlhttps://doi.org/10.1088/1361-6641/ab5da2
imec.availabilityPublished - imec


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