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Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

dc.contributor.authorPutcha, Vamsi
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorKaczer, Ben
dc.contributor.authorXie, Qi
dc.contributor.authorMaes, Jan Willem
dc.contributor.authorTang, Fu
dc.contributor.authorGivens, Michael
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-29T02:29:32Z
dc.date.available2021-10-29T02:29:32Z
dc.date.issued2020
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35773
dc.sourceIIOimport
dc.titleExtensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
dc.typeJournal article
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage113996
dc.source.journalMicroelectronics Reliability
dc.source.volume115
dc.identifier.urlhttps://doi.org/10.1016/j.microrel.2020.113996
imec.availabilityPublished - imec


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