On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors
dc.contributor.author | Kubicek, Stefan | |
dc.contributor.author | Jeong-Ho, Lyu | |
dc.contributor.author | van Meer, Hans | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-06T11:34:34Z | |
dc.date.available | 2021-10-06T11:34:34Z | |
dc.date.issued | 1999 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3577 | |
dc.source | IIOimport | |
dc.title | On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Kubicek, Stefan | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.source.peerreview | no | |
dc.source.beginpage | 404 | |
dc.source.endpage | 407 | |
dc.source.conference | ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium. | |
imec.availability | Published - imec |
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