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A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors

dc.contributor.authorKuhn, Rudiger
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCaymax, Matty
dc.contributor.authorVleugels, Frank
dc.contributor.authorVerschooten, Eric
dc.contributor.authorLoo, Roger
dc.contributor.authorLoheac, J. L.
dc.date.accessioned2021-10-06T11:35:28Z
dc.date.available2021-10-06T11:35:28Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3581
dc.sourceIIOimport
dc.titleA 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage436
dc.source.endpage439
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
imec.availabilityPublished - imec


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