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Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices

dc.contributor.authorRonchi, Nicolo
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorMin, Jinhong
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorShin, Changhwan
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-29T03:14:26Z
dc.date.available2021-10-29T03:14:26Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35853
dc.sourceIIOimport
dc.titleEndurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
dc.typeProceedings paper
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorMin, Jinhong
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.source.peerreviewyes
dc.source.conference2020 IEEE International Memory Workshop (IMW)
dc.source.conferencedate17/05/2020
dc.source.conferencelocationDresden Germany
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9108125
imec.availabilityPublished - imec


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