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Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

dc.contributor.authorRosseel, Erik
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorTirrito, Matteo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorRichard, Olivier
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKhazaka, Rami
dc.date.accessioned2021-10-29T03:16:58Z
dc.date.available2021-10-29T03:16:58Z
dc.date.issued2020-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35857
dc.sourceIIOimport
dc.titleContact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage37
dc.source.endpage42
dc.source.conferenceECS PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09805.0037ecst/pdf
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 98, Iss. 5


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