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Thermal stress-aware CMOS-SRAM partitioning in sequential 3-D technology

dc.contributor.authorSalahuddin, Shairfe Muhammad
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorGupta, Anshul
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchaekers, Marc
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorYu, Hao
dc.contributor.authorVandooren, Anne
dc.contributor.authorRyckaert, Julien
dc.contributor.authorNa, Myung Hee
dc.contributor.authorSpessot, Alessio
dc.date.accessioned2021-10-29T03:30:50Z
dc.date.available2021-10-29T03:30:50Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35880
dc.sourceIIOimport
dc.titleThermal stress-aware CMOS-SRAM partitioning in sequential 3-D technology
dc.typeJournal article
dc.contributor.imecauthorSalahuddin, Shairfe Muhammad
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorGupta, Anshul
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.imecauthorNa, Myung Hee
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.orcidimecSalahuddin, Shairfe Muhammad::0000-0002-6483-8430
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4631
dc.source.endpage4635
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9204748/
imec.availabilityPublished - open access


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