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The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVandamme, Ewout
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:47:56Z
dc.date.available2021-09-29T12:47:56Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/358
dc.sourceIIOimport
dc.titleThe potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage318
dc.source.endpage323
dc.source.conferenceProceedings of the 6th International Symposium on Silicon-on-Insulator Technology and Devices
dc.source.conferencedate22/05/1994
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 94-11


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