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Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
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Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
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Date
2020-05
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simon, Maik
;
Liang, Boshen
;
Fischer, Dustin
;
Knaut, Martin
;
Tahn, Alexander
;
Mikolajick, Thomas
;
Weber, Walter
Journal
IEEE Electron Device Letters
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1888
since deposited on 2021-10-29
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last month
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last week
Acq. date: 2026-01-09
Citations
Metrics
Views
1888
since deposited on 2021-10-29
5
last month
2
last week
Acq. date: 2026-01-09
Citations