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dc.contributor.authorSimon, Maik
dc.contributor.authorLiang, Boshen
dc.contributor.authorFischer, Dustin
dc.contributor.authorKnaut, Martin
dc.contributor.authorTahn, Alexander
dc.contributor.authorMikolajick, Thomas
dc.contributor.authorWeber, Walter
dc.date.accessioned2021-10-29T04:11:41Z
dc.date.available2021-10-29T04:11:41Z
dc.date.issued2020-05
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35951
dc.sourceIIOimport
dc.titleTop-down fabricated reconfigurable FET with two symmetric and high-current on-states
dc.typeJournal article
dc.contributor.imecauthorLiang, Boshen
dc.contributor.orcidimecLiang, Boshen::0000-0003-3299-9034
dc.source.peerreviewyes
dc.source.beginpage1110
dc.source.endpage1113
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume41
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9099545
imec.availabilityPublished - imec


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