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Extraction of statistical gate oxide parameters from large MOSFET arrrays

dc.contributor.authorStampfer, Bernhard
dc.contributor.authorSimicic, Marko
dc.contributor.authorWeckx, Pieter
dc.contributor.authorAbbasi, Arash
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.date.accessioned2021-10-29T04:46:47Z
dc.date.available2021-10-29T04:46:47Z
dc.date.issued2020
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36011
dc.sourceIIOimport
dc.titleExtraction of statistical gate oxide parameters from large MOSFET arrrays
dc.typeJournal article
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.identifier.doi10.1109/TDMR.2020.2985109
dc.source.peerreviewyes
dc.source.beginpage251
dc.source.endpage257
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue2
dc.source.volume20
imec.availabilityPublished - imec


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