Extraction of statistical gate oxide parameters from large MOSFET arrrays

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Authors

Stampfer, Bernhard; Simicic, Marko; Weckx, Pieter; Abbasi, Arash; Kaczer, Ben; Grasser, Tibor; Waltl, Michael

DOI

10.1109/TDMR.2020.2985109

ISSN

1530-4388

Issue

2

Journal

IEEE Transactions on Device and Materials Reliability

Volume

20

Title

Extraction of statistical gate oxide parameters from large MOSFET arrrays

Publication type

Journal article

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