Publication:

Extraction of statistical gate oxide parameters from large MOSFET arrrays

Date

2020
Journal article
https://doi.org/10.1109/TDMR.2020.2985109
Simple item page Full metadata Statistics
 
dc.contributor.authorStampfer, Bernhard
dc.contributor.authorSimicic, Marko
dc.contributor.authorWeckx, Pieter
dc.contributor.authorAbbasi, Arash
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-29T04:46:47Z
dc.date.available2021-10-29T04:46:47Z
dc.date.issued2020
dc.identifier.doi10.1109/TDMR.2020.2985109
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36011
dc.source.beginpage251
dc.source.endpage257
dc.source.issue2
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume20
dc.title

Extraction of statistical gate oxide parameters from large MOSFET arrrays

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles