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Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Publication:
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Date
2020
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Syshchyk, Olga
;
Hsu, Brent
;
Yu, Hao
;
Motsnyi, Vasyl
;
Vais, Abhitosh
;
Kunert, Bernardette
;
Mols, Yves
;
Alcotte, Reynald
;
Puybaret, Renaud
;
Waldron, Niamh
;
Soussan, Philippe
;
Boulenc, Pierre
;
Karve, Gauri
;
Simoen, Eddy
;
Collaert, Nadine
;
Puers, Bob
;
Van Hoof, Chris
Journal
Physical Review Applied
Abstract
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1983
since deposited on 2021-10-29
Acq. date: 2025-10-27
Citations
Metrics
Views
1983
since deposited on 2021-10-29
Acq. date: 2025-10-27
Citations