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Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equillibrium solidification

dc.contributor.authorTabata, Toshiyuki
dc.contributor.authorRaynal, Pierre-Edouard
dc.contributor.authorHuet, Karim
dc.contributor.authorEveraert, Jean-Luc
dc.date.accessioned2021-10-29T05:04:42Z
dc.date.available2021-10-29T05:04:42Z
dc.date.issued2020
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36040
dc.sourceIIOimport
dc.titleSegregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equillibrium solidification
dc.typeJournal article
dc.contributor.imecauthorEveraert, Jean-Luc
dc.identifier.doi10.1063/5.0005176
dc.source.peerreviewyes
dc.source.beginpage135701
dc.source.journalJournal of Applied Physics
dc.source.issue13
dc.source.volume127
imec.availabilityPublished - imec


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