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Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation

dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAlian, AliReza
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorWaldron, Niamh
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-29T05:07:36Z
dc.date.available2021-10-29T05:07:36Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36045
dc.sourceIIOimport
dc.titleLow-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation
dc.typeJournal article
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage3062
dc.source.endpage3068
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9127093
imec.availabilityPublished - imec


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