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The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanstraelen, Guy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:48:02Z
dc.date.available2021-09-29T12:48:02Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/360
dc.sourceIIOimport
dc.titleThe cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1679
dc.source.endpage1685
dc.source.journalSemiconductor Science and Technology
dc.source.volume9
imec.availabilityPublished - imec


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