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dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorJang, Doyoung
dc.contributor.authorHuynh-Bao, Trong
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMertens, Hans
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-29T07:04:57Z
dc.date.available2021-10-29T07:04:57Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36234
dc.sourceIIOimport
dc.titleGate-All-Around nanowire & nanosheet FETs for advanced, ultra-scaled technologies (Keynote)
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage14
dc.source.conference237th ECS Meeting - Advanced CMOS-Compatible Semiconductor Devices 19
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.identifier.urlhttps://doi.org/10.1149/09705.0003ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vo. 97, Issue 5


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