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Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization
Publication:
Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization
Date
2020
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Verhulst, Anne
;
Saeidi, Ali
;
Stolichnov, Igor
;
Alian, AliReza
;
Iwai, Hiroshi
;
Collaert, Nadine
;
Ionescu, Adrian
Journal
IEEE Transactions on Electron Devices
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1882
since deposited on 2021-10-29
Acq. date: 2025-10-25
Citations
Metrics
Views
1882
since deposited on 2021-10-29
Acq. date: 2025-10-25
Citations