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Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization

dc.contributor.authorVerhulst, Anne
dc.contributor.authorSaeidi, Ali
dc.contributor.authorStolichnov, Igor
dc.contributor.authorAlian, AliReza
dc.contributor.authorIwai, Hiroshi
dc.contributor.authorCollaert, Nadine
dc.contributor.authorIonescu, Adrian
dc.date.accessioned2021-10-29T07:14:59Z
dc.date.available2021-10-29T07:14:59Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36251
dc.sourceIIOimport
dc.titleExperimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage377
dc.source.endpage382
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8935490
imec.availabilityPublished - imec


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