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Layer configurations for Al-Ge eutectic wafer bonding

dc.contributor.authorVisker, Jakob
dc.contributor.authorKang, Shuo
dc.contributor.authorPeng, Lan
dc.contributor.authorVereecke, Bart
dc.contributor.authorHaspeslagh, Luc
dc.date.accessioned2021-10-29T07:31:08Z
dc.date.available2021-10-29T07:31:08Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36276
dc.sourceIIOimport
dc.titleLayer configurations for Al-Ge eutectic wafer bonding
dc.typeProceedings paper
dc.contributor.imecauthorVisker, Jakob
dc.contributor.imecauthorKang, Shuo
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorVereecke, Bart
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.source.peerreviewyes
dc.source.beginpage217
dc.source.conferencePRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu (online) USA
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09804.0217ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 98, Issue 4


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