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Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

dc.contributor.authorVohra, Anurag
dc.contributor.authorMakkonen, Ilja
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorKhanam, Afrina
dc.contributor.authorTirrito, Matteo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-29T07:33:49Z
dc.date.available2021-10-29T07:33:49Z
dc.date.issued2020-05
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36280
dc.sourceIIOimport
dc.titleSource/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
dc.typeJournal article
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.identifier.doi10.1149/2162-8777/ab8d91
dc.source.peerreviewyes
dc.source.beginpage44010
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue4
dc.source.volume9
imec.availabilityPublished - open access


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