Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clément; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried

doi:10.1149/2162-8777/ab8d91

Simple item page Full metadata Statistics

Files

Source_drain_materials_for_Ge_nMOS_devices__phosphorus_activation_in_epitaxial_Si__Ge__Ge1xSnx_and_SiyGe1xySnx 1.7 MB

Author(s)

;

;

;

;

;

;

;

;

;

;

Vandervorst, Wilfried

Journal

ECS Journal of Solid State Science and Technology

Metrics

207 since deposited on 2021-10-29

2last week

Acq. date: 2025-10-29

1961 since deposited on 2021-10-29

1last week

Acq. date: 2025-10-29

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Date

Files

Author(s)

Journal

Abstract

Description

Metrics

Downloads

Views

Citations

Metrics

Downloads

Views

Citations