Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clément; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried

doi:10.1149/2162-8777/ab8d91

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Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Date

2020-05

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https://doi.org/10.1149/2162-8777/ab8d91

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Source_drain_materials_for_Ge_nMOS_devices__phosphorus_activation_in_epitaxial_Si__Ge__Ge1xSnx_and_SiyGe1xySnx 1.7 MB

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Vandervorst, Wilfried

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ECS Journal of Solid State Science and Technology

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271 since deposited on 2021-10-29

Acq. date: 2026-06-26

1973 since deposited on 2021-10-29

Acq. date: 2026-06-25

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

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