Authors

Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clément; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried

DOI

10.1149/2162-8777/ab8d91

ISSN

2162-8769

Issue

4

Journal

ECS Journal of Solid State Science and Technology

Volume

9

Title

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Publication type

Journal article