Publication:

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Date

2020-05
Journal article
https://doi.org/10.1149/2162-8777/ab8d91
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Source_drain_materials_for_Ge_nMOS_devices__phosphorus_activation_in_epitaxial_Si__Ge__Ge1xSnx_and_SiyGe1xySnx 1.7 MB

Author(s)

Vohra, Anurag  
;
Makkonen, Ilja
;
Pourtois, Geoffrey  
;
Slotte, Jonatan
;
Porret, Clément  
;
Rosseel, Erik  
;
Khanam, Afrina
;
Tirrito, Matteo
;
Douhard, Bastien  
;
Loo, Roger  
;
Vandervorst, Wilfried  

Journal

ECS Journal of Solid State Science and Technology

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1964 since deposited on 2021-10-29
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229 since deposited on 2021-10-29
8last month
3last week
Acq. date: 2026-01-10

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1964 since deposited on 2021-10-29
Acq. date: 2026-01-10

Citations