Publication:

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Date

2020-05
Journal article
https://doi.org/10.1149/2162-8777/ab8d91
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dc.contributor.authorVohra, Anurag
dc.contributor.authorMakkonen, Ilja
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorKhanam, Afrina
dc.contributor.authorTirrito, Matteo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-29T07:33:49Z
dc.date.available2021-10-29T07:33:49Z
dc.date.issued2020-05
dc.identifier.doi10.1149/2162-8777/ab8d91
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36280
dc.source.beginpage44010
dc.source.issue4
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume9
dc.title

Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

dc.typeJournal article
dspace.entity.typePublication
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