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Separation of electron and hole trapping components of PBTI in SiON nMOS transistors

dc.contributor.authorWaltl, Michael
dc.contributor.authorStampfer, Bernhard
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-29T07:45:25Z
dc.date.available2021-10-29T07:45:25Z
dc.date.issued2020
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36298
dc.sourceIIOimport
dc.titleSeparation of electron and hole trapping components of PBTI in SiON nMOS transistors
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage113746
dc.source.journalMicroelectronics Reliability
dc.source.volume114
dc.identifier.urlhttps://doi.org/10.1016/j.microrel.2020.113746
imec.availabilityPublished - imec
imec.internalnotesSpecial issue: 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020


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