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RF/high-speed I/O ESD protection: Co-optimizing strategy between BEOL capacitance and HBM immunity in advanced CMOS process

dc.contributor.authorWu, Wei-Min
dc.contributor.authorKer, Ming-Dou
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorChen, Jie-Ting
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-29T08:23:25Z
dc.date.available2021-10-29T08:23:25Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36353
dc.sourceIIOimport
dc.titleRF/high-speed I/O ESD protection: Co-optimizing strategy between BEOL capacitance and HBM immunity in advanced CMOS process
dc.typeJournal article
dc.contributor.imecauthorWu, Wei-Min
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.identifier.doi10.1109/TED.2020.2994492
dc.source.peerreviewyes
dc.source.beginpage2752
dc.source.endpage2759
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume67
imec.availabilityPublished - open access


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