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Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

dc.contributor.authorZhao, Simeng E.
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorWang, Pengfei
dc.contributor.authorZhang, En Xia
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.date.accessioned2021-10-29T08:58:31Z
dc.date.available2021-10-29T08:58:31Z
dc.date.issued2020-01
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36406
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects on InGaAs FinFETs with modified gate stack
dc.typeJournal article
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.beginpage253
dc.source.endpage259
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8935103
imec.availabilityPublished - imec


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