dc.contributor.author | Zhao, Simeng E. | |
dc.contributor.author | Bonaldo, Stefano | |
dc.contributor.author | Wang, Pengfei | |
dc.contributor.author | Zhang, En Xia | |
dc.contributor.author | Waldron, Niamh | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Putcha, Vamsi | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Gerardin, Simone | |
dc.contributor.author | Paccagnella, Alessandro | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Fleetwood, Daniel M. | |
dc.date.accessioned | 2021-10-29T08:58:31Z | |
dc.date.available | 2021-10-29T08:58:31Z | |
dc.date.issued | 2020-01 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/36406 | |
dc.source | IIOimport | |
dc.title | Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack | |
dc.type | Journal article | |
dc.contributor.imecauthor | Waldron, Niamh | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Putcha, Vamsi | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 253 | |
dc.source.endpage | 259 | |
dc.source.journal | IEEE Transactions on Nuclear Science | |
dc.source.issue | 1 | |
dc.source.volume | 67 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8935103 | |
imec.availability | Published - imec | |