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Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs

dc.contributor.authorZhou, L.
dc.contributor.authorZhang, Q.
dc.contributor.authorYang, H.
dc.contributor.authorJi, Z.
dc.contributor.authorZhang, Z.
dc.contributor.authorLiu, Q.
dc.contributor.authorXu, H.
dc.contributor.authorTang, B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMa, X.
dc.contributor.authorWang, X.
dc.contributor.authorLi, Y.
dc.contributor.authorYin, H.
dc.contributor.authorLuo, J.
dc.contributor.authorZhao, C.
dc.contributor.authorWang, W.
dc.date.accessioned2021-10-29T09:05:56Z
dc.date.available2021-10-29T09:05:56Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36416
dc.sourceIIOimport
dc.titleUnderstanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage965
dc.source.endpage968
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume41
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9086034
imec.availabilityPublished - imec


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