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Scatterometry solutions for 14nm half-pitch BEOL layers patterned by EUV single exposure

dc.contributor.authorDas, Sayantan
dc.contributor.authorHung, Joey
dc.contributor.authorHalder, Sandip
dc.contributor.authorKoret, Roy
dc.contributor.authorTurovets, Igor
dc.contributor.authorCharley, Anne-Laure
dc.contributor.authorLeray, Philippe
dc.date.accessioned2021-10-31T08:17:29Z
dc.date.available2021-10-31T08:17:29Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36598
dc.sourceIIOimport
dc.titleScatterometry solutions for 14nm half-pitch BEOL layers patterned by EUV single exposure
dc.typeProceedings paper
dc.contributor.imecauthorDas, Sayantan
dc.contributor.imecauthorHung, Joey
dc.contributor.imecauthorHalder, Sandip
dc.contributor.imecauthorCharley, Anne-Laure
dc.contributor.imecauthorLeray, Philippe
dc.contributor.orcidimecDas, Sayantan::0000-0002-3031-0726
dc.contributor.orcidimecHalder, Sandip::0000-0002-6314-2685
dc.source.peerreviewyes
dc.source.beginpage116112A
dc.source.conferenceMetrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
dc.source.conferencedate22/02/2021
dc.source.conferencelocationSan Jose,CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2583714
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol.11611


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