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Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy

dc.contributor.authorMcNally, P. J.
dc.contributor.authorCurley, J. W.
dc.contributor.authorBolt, M.
dc.contributor.authorReader, A.
dc.contributor.authorTuomi, T.
dc.contributor.authorRantamaki, R.
dc.contributor.authorDanilewsky, A. N.
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-14T11:30:25Z
dc.date.available2021-10-14T11:30:25Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3665
dc.sourceIIOimport
dc.titleMonitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage351
dc.source.endpage358
dc.source.journalJ. Materials Science: Materials in Electronics
dc.source.issue5_6
dc.source.volume10
imec.availabilityPublished - open access


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