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Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

dc.contributor.authorMcNally, P. J.
dc.contributor.authorO'Hare, M.
dc.contributor.authorTuomi, T.
dc.contributor.authorRantamaki, R.
dc.contributor.authorJacobs, Koen
dc.contributor.authorConsidine, L.
dc.contributor.authorDanilewsky, A. N.
dc.date.accessioned2021-10-14T11:30:26Z
dc.date.available2021-10-14T11:30:26Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3666
dc.sourceIIOimport
dc.titleSynchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage327
dc.source.endpage332
dc.source.conferenceWide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications
dc.source.conferencedate5/04/1999
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 572


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