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Study of emission and capture processes in semi-vertical GaN-on-Si trench-MOSFETs

dc.contributor.authorDrobnŭ, Jakub
dc.contributor.authorMarek, Juraj
dc.contributor.authorKosa, A.
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorStuchlíková, Lubica
dc.date.accessioned2021-10-31T08:32:25Z
dc.date.available2021-10-31T08:32:25Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36684
dc.sourceIIOimport
dc.titleStudy of emission and capture processes in semi-vertical GaN-on-Si trench-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage123
dc.source.endpage126
dc.source.conferenceThe 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020)
dc.source.conferencedate11/10/2020
dc.source.conferencelocationSmolenice Slovakia
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9393836
imec.availabilityPublished - imec


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