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Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

dc.contributor.authorGeens, Karen
dc.contributor.authorHerwig, Hahn
dc.contributor.authorLiang, Hu
dc.contributor.authorBorga, Matteo
dc.contributor.authorCingu, Deepthi
dc.contributor.authorYou, Shuzhen
dc.contributor.authorMarx, Matthias
dc.contributor.authorOligschlaeger, Robert
dc.contributor.authorFahle, Dirk
dc.contributor.authorHeuken, Michael
dc.contributor.authorOdnoblyudov, Vladimir
dc.contributor.authorAktas, Ozgur
dc.contributor.authorBasceri, Cem
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-31T08:39:53Z
dc.date.available2021-10-31T08:39:53Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36720
dc.sourceIIOimport
dc.titleDemonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
dc.typeProceedings paper
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech)
dc.source.conferencedate24/05/2021
dc.source.conferencelocationVirtual conference Virtual conference
imec.availabilityPublished - imec


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