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Photoluminescence mapping and Rutherford backscattering of InGaN epilayers

dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorWhite, M. E.
dc.contributor.authorPereira, S.
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorJacobs, Koen
dc.date.accessioned2021-10-14T11:32:23Z
dc.date.available2021-10-14T11:32:23Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3717
dc.sourceIIOimport
dc.titlePhotoluminescence mapping and Rutherford backscattering of InGaN epilayers
dc.typeMeeting abstract
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage87
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate4/06/1999
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - open access


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