Show simple item record

Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate

dc.contributor.authorTallarico, Andrea
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorFiegna, C
dc.contributor.authorSangiorgi, E
dc.date.accessioned2021-10-31T11:31:49Z
dc.date.available2021-10-31T11:31:49Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37221
dc.sourceIIOimport
dc.titleImproving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
dc.typeProceedings paper
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference2021 IEEE Latin American Electronic Devices Conference - LAEDC2021
dc.source.conferencedate19/04/2021
dc.source.conferencelocationonline online
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record